Commit Graph

26 Commits

Author SHA1 Message Date
Adrian Bunk
607d1cb104 [MTD] [OneNAND] proper onenand_bbt_read_oob() prototype
This patch adds a proper prototype for onenand_bbt_read_oob() in
include/linux/mtd/onenand.h

Signed-off-by: Adrian Bunk <bunk@kernel.org>
Signed-off-by: David Woodhouse <dwmw2@infradead.org>
2008-04-22 15:59:13 +01:00
Kyungmin Park
ee9745fcf2 [MTD] [OneNAND] 2X program support
The 2X Program is an extension of Program Operation.

Since the device is equipped with two DataRAMs, and two-plane NAND Flash 
memory array, these two component enables simultaneous program of 4KiB.
Plane1 has only even blocks such as block0, block2, block4 while Plane2 
has only odd blocks such as block1, block3, block5.
So MTD regards it as 4KiB page size and 256KiB block size

Now the following chips support it. (KFXXX16Q2M)
Demux: KFG2G16Q2M, KFH4G16Q2M, KFW8G16Q2M,
Mux:   KFM2G16Q2M, KFN4G16Q2M,

And more recent chips

Signed-off-by: Kyungmin Park <kyungmin.park@samsung.com>
Signed-off-by: David Woodhouse <dwmw2@infradead.org>
2007-06-30 08:24:57 +01:00
Kyungmin Park
470bc84436 [MTD] [OneNAND] Classify the page data and oob buffer
Classify the page data and oob buffer
and it prevents the memory fragementation (writesize + oobsize)

Signed-off-by: Kyungmin Park <kyungmin.park@samsung.com>
Signed-off-by: David Woodhouse <dwmw2@infradead.org>
2007-03-09 08:08:09 +00:00
Kyungmin Park
abf3c0f23d [MTD] OneNAND: Reduce internal BufferRAM operations
It use blockpage instead of a pair (block, page). It can also cover a small chunk access. 0x00, 0x20, 0x40 and so on.

And in JFFS2 behavior, sometimes it reads two pages alternatively.
e.g., It first reads A page, B page and A page.
So we check another bufferram to find requested page.

Signed-off-by: Kyungmin Park <kyungmin.park@samsung.com>
2007-02-02 09:29:36 +09:00
Kyungmin Park
9bfbc9b24f [MTD] OneNAND: Remove unused fields
- Remove unused fields
- Fix typo

Signed-off-by: Kyungmin Park <kyungmin.park@samsung.com>
2007-01-31 14:25:21 +09:00
Kyungmin Park
75384b0d9c [MTD] OneNAND: Update copyrights and code cleanup
Update copyrights and code cleanup

Signed-off-by: Kyungmin Park <kyungmin.park@samsung.com>
2007-01-18 11:10:57 +09:00
Kyungmin Park
738d61f537 [MTD] OneNAND: Reduce Double Density Package (DDP) operations
- DDP code clean-up
- Reduce block & bufferram operations in DDP

Signed-off-by: Kyungmin Park <kyungmin.park@samsung.com>
2007-01-18 11:00:31 +09:00
Adrian Hunter
a8de85d557 [MTD] OneNAND: Implement read-while-load
Read-while-load enables higher performance read operations.

Signed-off-by: Adrian Hunter <ext-adrian.hunter@nokia.com>
Signed-off-by: Kyungmin Park <kyungmin.park@samsung.com>
2007-01-10 14:58:42 +02:00
Kyungmin Park
60d84f9739 [MTD] OneNAND: add subpage write support
OneNAND supports up to 4 writes at one NAND page. Add support of this feature.

Signed-off-by: Kyungmin Park <kyungmin.park@samsung.com>
2007-01-10 14:35:00 +02:00
Kyungmin Park
08f782b60a [MTD] OneNAND: lock support
Now you can use mtd lock inferface on OneNAND

The idea is from Nemakal, Vijaya, thanks

Signed-off-by: Kyungmin Park <kyungmin.park@samsung.com>
2006-11-16 11:29:39 +09:00
Kyungmin Park
2c22120fbd MTD: OneNAND: interrupt based wait support
We can use the two methods to wait.
  1. polling: read interrupt status register
  2. interrupt: use kernel ineterrupt mechanism

  To use interrupt method, you first connect onenand interrupt pin to your
platform and configure interrupt properly

Signed-off-by: Kyungmin Park <kyungmin.park at samsung.com>
2006-11-16 11:23:48 +09:00
Kyungmin Park
28b79ff966 [MTD ONENAND] Check OneNAND lock scheme & all block unlock command support
OneNAND lock scheme depends on density and process of chip.
Some OneNAND chips support all block unlock

Signed-off-by: Kyungmin Park <kyungmin.park@samsung.com>
Signed-off-by: David Woodhouse <dwmw2@infradead.org>
2006-09-26 16:46:28 +01:00
Randy Dunlap
ea9b6dcc15 MTD: kernel-doc fixes + additions
Fix some kernel-doc typos/spellos.
Use kernel-doc syntax in places where it was almost used.
Correct/add struct, struct field, and function param names where needed.

Signed-off-by: Randy Dunlap <rdunlap@xenotime.net>
Signed-off-by: David Woodhouse <dwmw2@infradead.org>
2006-06-29 08:55:41 +01:00
Thomas Gleixner
5bd34c091a [MTD] NAND Replace oobinfo by ecclayout
The nand_oobinfo structure is not fitting the newer error correction
demands anymore. Replace it by struct nand_ecclayout and fixup the users
all over the place. Keep the nand_oobinfo based ioctl for user space
compability reasons.

Signed-off-by: Thomas Gleixner <tglx@linutronix.de>
2006-05-29 15:06:50 +02:00
Kyungmin Park
493c646077 OneNAND: One-Time Programmable (OTP) support
One Block of the NAND Flash Array memory is reserved as
a One-Time Programmable Block memory area.
Also, 1st Block of NAND Flash Array can be used as OTP.

The OTP block can be read, programmed and locked using the same
operations as any other NAND Flash Array memory block.
OTP block cannot be erased.

OTP block is fully-guaranteed to be a valid block.

Signed-off-by: Kyungmin Park <kyungmin.park@samsung.com>
2006-05-12 15:35:50 +01:00
Kyungmin Park
9c01f87db1 OneNAND: handle byte access on BufferRAM
Signed-off-by: Kyungmin Park <kyungmin.park@samsung.com>
2006-05-12 15:35:45 +01:00
Kyungmin Park
532a37cf8d [PATCH] mtd onenand driver: reduce stack usage
Signed-off-by: Linus Torvalds <torvalds@osdl.org>
2005-12-18 16:28:24 -08:00
Kyungmin Park
37b1cc3910 [PATCH] mtd onenand driver: check correct manufacturer
This (and the three subsequent patches) is working well on OMAP H4 with
2.6.15-rc4 kernel and passes the LTP fs test.

Signed-off-by: Linus Torvalds <torvalds@osdl.org>
2005-12-18 16:28:23 -08:00
Thomas Gleixner
61ecfa8777 [MTD] includes: Clean up trailing white spaces
Signed-off-by: Thomas Gleixner <tglx@linutronix.de>
2005-11-07 14:32:58 +01:00
Kyungmin Park
83a368380e [MTD] OneNAND: Enhanced support for DDP (Dual Densitiy Packages)
Add density mask for better support of DDP chips.

Signed-off-by: Kyungmin Park <kyungmin.park@samsung.com>
Signed-off-by: Thomas Gleixner <tglx@linutronix.de>
2005-11-06 22:59:48 +01:00
Kyungmin Park
a41371eb6d [MTD] OneNAND: Power Management (PM) support
Add suspend/resume

Signed-off-by: Kyungmin Park <kyungmin.park@samsung.com>
Signed-off-by: Thomas Gleixner <tglx@linutronix.de>
2005-11-06 22:42:28 +01:00
Kyungmin Park
d36d63d404 [PATCH] OneNAND: Fix bug in write verify
- Remove unused block, page parameters
- Add constant instead of runtime value

Signed-off-by: Kyungmin Park <kyungmin.park@samsung.com>
Signed-off-by: Thomas Gleixner <tglx@linutronix.de>
2005-11-06 21:24:51 +01:00
Kyungmin Park
fcc31470c4 [PATCH] OneNAND: Update OMAP OneNAND mapping using device driver model
- Update OMAP OneNAND mapping file using device driver model
- Remove board specific macro and values.

Signed-off-by: Kyungmin Park <kyungmin.park@samsung.com>
Signed-off-by: Thomas Gleixner <tglx@linutronix.de>
2005-11-06 21:22:01 +01:00
Kyungmin Park
cdc001305d [PATCH] OneNAND: Simple Bad Block handling support
Based on NAND memory bad block table code

Signed-off-by: Kyungmin Park <kyungmin.park@samsung.com>
Signed-off-by: Thomas Gleixner <tglx@linutronix.de>
2005-11-06 21:20:53 +01:00
Kyungmin Park
52b0eea73d [PATCH] OneNAND: Sync. Burst Read support
Add OneNAND Sync. Burst Read support
Tested with OMAP platform

Signed-off-by: Kyungmin Park <kyungmin.park@samsung.com>
Signed-off-by: Thomas Gleixner <tglx@linutronix.de>
2005-11-06 21:19:37 +01:00
Kyungmin Park
cd5f6346bc [MTD] Add initial support for OneNAND flash chips
OneNAND is a new flash technology from Samsung with integrated SRAM
buffers and logic interface.

Signed-off-by: Kyungmin Park <kyungmin.park@samsung.com>
Signed-off-by: Thomas Gleixner <tglx@linutronix.de>
2005-11-06 21:17:24 +01:00